Characteristics of Sub-100nm High-k Gate Dielectrics MOSFETs With Different Source/Drain Structure
نویسندگان
چکیده
The characteristics of a typical 70nm high K gate dielectrics MOSFET with different source/drain structure including S/D lift-up structure are simulated by two dimensional device simulator. The impact of FIBL effect the gate dielectric permikttivity increasing to the characteristics of MOSFET is investigated. The simulation results shows that the degradation of MOSFET characteristics can be suppress by change the structure of source/drain such as gate offset and S/D lift-up.
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